* 4A,900V,RDS(on)(typ.)=2.7@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability ORDERING INFORMATION Part No. SVF4N90F.

SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minim.

SVF4N90F

SVF4N90MJ

SVF4N90T

SVF4N150F

SVF4N150P7

SVF4N150PF

SVF4N60CADTR

SVF4N60CAF

SVF4N60CAK

SVF4N60CAMJ

SVF4N60CAMN

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SVF4N60D